一、課程說明(Course Description)
Assume students have possessed basic knowledge of semiconductor physics and devices, this class will expose the students to deep submicron devices and ULSI fabrication process. What are the challenges current ULSI technology has faced? How are advanced ULSI devices designed and fabricated? What are the implications for device electrical performance caused by fabrication techniques? You will have ideas about these questions after taking this course. The following topics will be addressed in this course.
A. Moore’s Law and MOS Scaling Trend.
B. Gate Dielectric and Electrode of MOSFET
C. Isolation Technologies for Integrated Circuits
D. Contact and Shallow Junction Technology
E. Multilevel Interconnect Technology
F. DRAM Process and Its Perspective
G. Future Technology such as double gate MOS, SOI, strained Si, Ge MOSFET.
二、指定用書(Text Books)
No text book is required but following books are useful references
1. C. Y. Chang and S. M. Sze, ULSI Technology, McGraw Hill Book Com, 1996.
2. S. M. Sze, Physics of Semiconductor Devices, Wiley
3. Y. Taur and T. Ning, Fundamentals of Modern VLSI Devices, Cambridge Univ. Press, 1998.
4. Wolf, Silicon Processing for the VLSI Era Vol.2: Process Integration, Lattice Press, 1990.
5. Wolf and Tauber, Silicon Processing for the VLSI Era Vol.1: Process Technology, Lattice Press, 1986.
三、參考書籍(References)
The following Supplementary Journals would be helpful for your study.
1. IEEE Transactions on Electron Devices
2. IEEE Electron Device Letters
3. Journal of Applied Physics
4. Applied Physics Letters
5. Journal of the Electrochemical Society
6. Electrochemical and Solid-State Letters
7. Semiconductor International
四、教學方式(Teaching Method)
Power-Point handout download from website.
六、成績考核(Evaluation)
No make-up exam. The final grade will depend on the items with relative weights shown below:
Midterm I………….35%
Final Exam………..35%
Final Oral and Written Report ……30%
Cheating Policy:
Cheating is not tolerated. Getting the bad points in the exams may not fail in the course, but the failing grade in this course will be necessarily got once cheating is found.
七、可連結之網頁位址
http://mx.nthu.edu.tw/~yunhwu