一、課程說明(Course Description)
<br>主要內容含:
<br>1.基本半導體物理, 2. 載子傳輸, 3. P-N接面, 4. 雙極接面電晶體(BJT),
<br>5. 金氧半元件(MOS), 6. 微波及光電元件簡介, 7. 論文研讀報告等。
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<br>二、指定用書(Text Books)
<br>S.M. Sze (2002), Semiconductor devices: physics and technology, 2nd Ed., John Wiley
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<br>三、參考書籍(References)
<br>1. A. Neamen (2003), Semiconductor Physics and Devices, 3rd Ed., Irwin.
<br>2. S. Wolf (1995), Silicon Processing for the VLSI Era, Vol.3, Lattice Press
<br>3. S.M. Sze (1981), Physics of Semiconductor Devices, John Wiley.
<br>4. E.H. Nicollian & J.R. Brews (1982), MOS Physics and Technology, John Wiley.
<br>5. R.S. Muller & T.I. Kamins (1986), Device Electronics for Integrated Circuits, John Wiley.
<br>6. M. Shur (1990), Physics of Semiconductor Devices, Prentice-Hall.
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<br>四、教學方式(Teaching Method)
<br>以power point說明, 按text book課程內容循序講授,
<br>指定論文研讀,請同學口頭報告並全體討論
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<br> 五、教學進度(Syllabus)
<br>依據課程內容說明分項之上課時數,
<br>1, 2 : 6 hr,
<br>3: 6 hr,
<br>4: 4 hr,
<br>5: 15 hr,
<br>6: 6 hr,
<br>7: 10 hr,
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<br>六、成績考核(Evaluation)
<br>筆試: 70%
<br>論文研讀報告: 30%
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<br>七、可連結之網頁位址
<br>http://www.ess.nthu.edu.tw/~lkschang/
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