一、課程說明(Course Description)
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<br>This course starts with issues in device modeling and parameter extraction 
<br>for IC simulations.  We will examine the significance of device characteristics in various circuit operation conditions. MOSFET Device parameter extraction and measurement techiques will be cover extensively. Testkey designs for device parameter extraction is including this the course content. 3 hands-on experiece of device measurement laboratory sessions are included in this course as part of the grading criteria.
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<br> 二、指定用書(Text Books)
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<br>"Semiconductor Material and Device Characterization", 3nd Ed., D. Schroder
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<br> 三、參考書籍(References)
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<br>"MOSFET modeling with SPICE- principles and practice", D. P. Foty
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<br> 四、教學方式(Teaching Method)
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<br>Four homework assignments and three measurement lab reports are required.
<br>Three characterization laboratory sessions will be arranged in class to give hand-on experience of measurement equipment operations.
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<br> 五、教學進度(Syllabus)
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<br>Week 			Topic									Reading
<br>   1 	Electrical characterizations of doping level		
<br>   2	Hall effect, SIMS , RBS 				
<br>   3	Metal-semiconductor Contacts			
<br>   4	Barrier Height, Electromigration			
<br>   5	Series Resistance			
<br>   6	Vt, Hot carrier, Lab1				
<br>   7	Spring Break
<br>   8	Midterm Exam I 
<br>   9	Oxide interface					
<br>  10	Trap charge, Lab2					
<br>  11	Oxide integrity				
<br>  12	Mobility Measurement, Lab3				
<br>  13	MOSFET mobility extraction
<br>  14	Midterm Exam II 
<br>  15	SPICE Modeling					
<br>  16	BSIM MOSFET Models				
<br>  17	Final Report Presentation 						
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<br>Lab 1: MOSFET device general measurement
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<br>Lab 2: CV measurements 
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<br> 六、成績考核(Evaluation)
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<br>Homework Sets (4) - 20%
<br>Lab (2) - 20%
<br>Midterm I, II - 40% 
<br>Project- 20%
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<br> 七、可連結之網頁位址
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<br>http://well.ee.nthu.edu.tw/~ycking/course.html
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