指定用書(Text Books)
The lecture notes (text format) will be written by the instructor and
distributed
chapter by chapter.
教學進度(Syllabus)
Title: Nanostructure Physics and Devices
Theoretical part:
1.Review of 1D/2D quantum mechanics/statistics
-Wave solutions
-Density of states
-1D noninteracting metal - quantized conductance
2.1D interacting metal – Luttinger liquid (I)
-Review of Fermi Liquid
-Bosonization
-Green’s function
3.1D interacting metal – Luttinger liquid (II)
-Strong correlation
-Density of states
-Tunneling conductance
4.Spintronics – Luttinger liquid approach
-Scaling dimension of impurity potential
-Spin filtering effect of Luttinger liquid
5.2D grapheme
-Band structure
-Klein paradox
Experimental part:
6.Electrical transport
-Difficulties in the measurements of intrinsic I-V characteristics
-Transport measurements
-Data analysis
7.1D electrical transport and electronic device
-Silicon-compatible carbon nanotube processing technologies
-Noninteracting transport and devices
-Interacting transport and devices
8.Spin transport and devices
-Generation of spin-polarized current
-Local measurement of spin current (Spin valve effect)
-Non-local measurement of spin current
-Spin transistors
-Spin non-volatile memory
9.Graphene-based electronics
-Silicon-compatible graphene processing technologies
-Klein paradox and ballistic transport
-Graphene field effect transistors
成績考核(Evaluation)
Homework (20%), midterm (40%), final (40%)