一、課程說明(Course Description)

This course will give a general but advanced introduction to the field of
nanoelectronics which use quantum phenomena to realize new functions or devices
and new building blocks aimed at replacing or upgrading the conventional silicon
technology. This course will start with discussion of the inherent limitations of
device miniaturization, followed by the basic properties of nanostructure systems
and the carrier transport. In the part of nanoscale devices we will focus on
quantum dot, molecular electronics, semiconducting nanowires, and spin
electronics.


二、指定用書(Text Books)

The lecture notes (text format) will be written by the instructor and distributed
chapter by chapter.

三、參考書籍(References)

1. Y. Taur, and T. H. Ning, Fundamentals of Modern VLSI Devices, Cambridge
Univ. Press, 1998.
2. M. Balkanski, and R. F. Wallis, Semiconductor Physics and Applications,
Oxford Univ. Press, 2000.
3. D. K. Ferry, and S. M. Goodnick, Transport in Nanostructures, Cambridge
Univ. Press, 1999.
4. J. Davies, The Physics of Low-dimensional Semiconductors, Cambridge Univ.
Press, 2000.
5. K. Seeger, Semiconductor Physics, Springer, 1999.
6. K. Barnham, and D. Vvedensky, Low-dimensional Semiconductor Structures,
Cambridge Univ. Press, 2001.
7. M. Ziese, and M. J. Thornton, Spin Electronics, Springer, 2001.
8. R. Waser, Nanoelectronics and Information Technology, Wiley-VCH, 2003.


四、教學方式(Teaching Method)

五、教學進度(Syllabus)

1. chapter: Introduction
2. chapter: Fundamental of quantum theory of solids
3. chapter: Transport in nanostructures
4. chapter: Quantum dot and single-electron devices
5. chapter: Molecular electronics
6. chapter: Carbon nanotube electronics
7. chapter: Semiconducting nanowires
8. chapter: Spin electronics

六、成績考核(Evaluation)

Homework (20%), midterm (40%), final (40%)