一、課程說明(Course Description)
<br>This course gives a general introduction to memory types, operation principles, basic cell structure, process and fabrication issues, basic sense amplifiers, array architecture, etc. The course is designed for beginning graduate students who have basic understanding of semiconductor device physics and IC technologies.
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<br> 二、指定用書(Text Books)
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<br>"Digital Integrated Ciruits, a design perspective" , Jan Rabaey, Prentice Hall
<br>"Nonvolatile Semiconductor Memories Technologies: A Complete to Understanding and Using NVSM Devices", Brown & Brewer, IEEE Press 
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<br> 三、參考書籍(References)
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<br> 四、教學方式(Teaching Method)
<br>3 hours lecture each week. Simulation based assignments and final project.
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<br> 五、教學進度(Syllabus)
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<br>Week 		Topic				
<br>1           Introduction			
<br>2        SRAM Cell Basics
<br>3 	SRAM Array / Advance Technologies		
<br>4	DRAM Cell Basics	
<br>5	Advance DRAM Technologies	
<br>6        Mask ROM	
<br>7	EPROM		
<br>8	EEPROM
<br>9	Midterm Exam (4/20)	
<br>10	Flash Cells				
<br>11	Flash Array Architecture
<br>12	Advance Flash Technologies		
<br>13	Periphery Circuit/Decoders
<br>14	Sensing and Control circuits 
<br>15       Failure Mechanisms/ Reliability   
<br>16	Charge Trapping Devices
<br>17       Non-Charge Based Memories
<br>18       Final Project/Exam
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<br> 六、成績考核(Evaluation)
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<br>Midterm 30%
<br>Homework 30%
<br>Final  40%
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<br> 七、可連結之網頁位址
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