TEXT:	
<br>	“Semiconductor Material and Device Characterization”
<br>	D. K. Schroder
<br>
<br>REFERENCE:
<br>	"MOSFET modeling with SPICE- principles and practice"
<br>	D. P. Foty
<br>
<br>SIMULATION:
<br>HSPICE , MEDICI and Layout Tools available on the EE Workstations
<br>
<br>COURSE ASSIGNMENTS
<br>	
<br>	Four homework assignments and a final report are required. Some 
<br>homework sets and the final project might required the use of SPICE, MEDICI or 
<br>other simulation tools. Three laboratory sessions in class give hand-on 
<br>experience for real device/testkey measurement operations.
<br>
<br>GRADING: 	
<br>		
<br>		Midterm Exam – 20%
<br>		Measurement Labs / Report (5) – 50%
<br>		Final Exam – 30%
<br> 
<br>
<br>Week Date		Topic			Reading
<br>1 	Introduction				
<br>2	Basic MOSFETs				
<br>3     	Resistivity Measurement			chap 1 
<br>4      	Lab 1 
<br>6       Dopant Level & Profiling		chap 2
<br>7      	Contact Characterization 		chap 3 
<br>8      	MOSFET Characterization			4.6-4.10
<br>8	Lab 2
<br>9       Model & Parameter Extraction		4.6-4.10  	
<br>10	Midterm Exam  
<br>11      CV Measurement, Trap States		6.1-6.3 
<br>12   	Lab 3 
<br>13      Oxide Integrity		                6.4-6.5 
<br>14 	Lab 4 		
<br>15   	Oxide Interface/Mobility 		8.1-8.4
<br>16  	Midterm Exam II 
<br>17   	Lab 5		
<br>18	Final Exam