Instructor:Yung-Hsien Wu
Office: ESS Building 314
Office Hours: Monday 1:30~3:30 pm or by appointment
Phone: 62248
Email: yunhwu@mx.nthu.edu.tw
Textbook:
J.D. Plummer, Silicon VLSI Technology: Fundamentals, Practice and Modeling,
Pearson Education, 2009.
M. Quirk and J. Serda, Semiconductor Manufacturing Technology, Pearson
Education, 2011.
Reference:
1. C. Y. Chang and S. M. Sze, ULSI Technology, McGraw Hill Book Com, 1996.
2. S. M. Sze, Physics of Semiconductor Devices, Wiley
3. Y. Taur and T. Ning, Fundamentals of Modern VLSI Devices, Cambridge
Univ. Press, 1998.
4. Wolf, Silicon Processing for the VLSI Era Vol.2: Process Integration,
Lattice Press, 1990.
5. Wolf and Tauber, Silicon Processing for the VLSI Era Vol.1: Process
Technology, Lattice Press, 1986.
6. S. A. Campbell, The Science and Engineering of Microelectronic
Fabrication, Oxford Univ. Press, 2001
Syllabus
Assume that students have possessed basic knowledge of semiconductor physics and
devices, this class will expose the students to silicon MOS device processing,
the fabrication steps, processing equipment and important science and
engineering theoretical aspects. The following topics will be addressed in this
course.
1. Introduction and Historical Perspect
2. IC Process Overview
3. Crystal Growth, Wafer Fab and Properties
4. Semiconductor Manufacturing-Clean Rooms, Wafer Clean, and Gettering
5. Photolithography
6. Thin Film Deposition
7. Metallization
8. Etching
9. “Modern” Topics
R Trend for CMOS Scaling
R High-k Dielectrics
R Advanced Devices
Course Objectives:
1. Understanding the impact of the physical and chemical processes of
integrated circuit fabrication technology on the design of integrated circuits.
2. Understanding physics of the crystal growth, wafer fabrication and basic
properties of silicon wafers.
3. Learning CMOS process flow from choosing a substrate, forming active
region, formation of N and P well, gate, LDD, source/drain, local interconnects,
and multilevel metal.
4. Learning concepts of dopant solid solubility, diffusion macroscopic
point, and different solutions to diffusion equation.
5. Learning concepts of ion implantation, role of the crystals structures,
high-energy implants, ultralow energy implants and ion beam heating methods.
6. Learning concepts of thin film deposition including chemical vapor
deposition and physical vapor deposition.
7. Learning concepts of wet etching, and plasma etching mechanism and
systems.
8. Understanding the following topics
R What are the challenges current ULSI technology has faced?
R How are advanced ULSI devices designed and fabricated?
R What are the implications for device electrical performance caused by
fabrication techniques?
Handout:
Download from website. http://mx.nthu.edu.tw/~yunhwu/MEE.htm
Grading:
No make-up exam. The final grade will depend on the items with relative weights
shown below:
O Midterm ..………….35%
O Final Exam………...35%
O Final Oral and Written Report ……30%