一、課程說明(Course Desc<x>ription)
<br>宗旨: 學習基本半導體物理及載子傳輸現象, 瞭解常用半導體元件電特性之物理機制, 並介紹各種
<br>應用半導體所製作的元件  
<br>內容: 1.基本半導體物理, 2. 載子傳輸, 3. P-N接面, 4. 雙極接面電晶體(BJT),
<br>5. 金氧半元件(MOS), 6. 微波及光電元件簡介, 7. 論文研讀報告等。
<br>預修課程: 電子學1
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<br>二、指定用書(Text Books)
<br>S.M. Sze (2013), Semiconductor devices: physics and technology, 3rd Ed., John 
<br>Wiley
<br>
<br>三、參考書籍(References)
<br>1. A. Neamen (2003), Semiconductor Physics and Devices, 3rd Ed., Irwin.
<br>2. S. Wolf (1995), Silicon Processing for the VLSI Era, Vol.3, Lattice Press
<br>3. S.M. Sze (1981), Physics of Semiconductor Devices, John Wiley.
<br>4. E.H. Nicollian & J.R. Brews (1982), MOS Physics and Technology, John Wiley.
<br>5. R.S. Muller & T.I. Kamins (1986), Device Electronics for Integrated Circuits, 
<br>John Wiley.
<br>6. M. Shur (1990), Physics of Semiconductor Devices, Prentice-Hall.
<br>
<br>四、教學方式(Teaching Method)
<br>以power point說明, 按text book課程內容循序講授,
<br>指定論文研讀,請同學口頭報告並全體討論
<br>
<br>五、教學進度(Syllabus)
<br>第一週 Ch. 0 Semiconductor Technology Prospects
<br>第二週 Ch. 1 Energy band  
<br>第三週 Ch. 1 Carrier concentration, Ch.2 Carrier transport 
<br>第四週 Ch. 2 Carrier transport
<br>第五週 Ch. 3 p-n Junction
<br>第六週 Ch. 3 p-n Junction
<br>第七週 Ch. 4 Bipolar Transistor and Related Device
<br>第八週 Ch. 4  Bipolar Transistor and Related Device
<br>第九週 Mid-term Exam, Ch.5 MOS capacitor and MOSFETs
<br>第十週 Ch. 6  Advanced MOSFET and Related Device
<br>第十一週 Ch. 6 Advanced MOSFET and Related Device
<br>第十二週 Ch. 7 MESFET and Related Device
<br>第十三週 Ch. 8 Microwave diodes
<br>第十四週 Ch. 9 LED and Lasers 
<br>第十五週 Ch. 10 Photo-detector and Solar Cells
<br>第十六週 Final Exam
<br>第十七週 Literature reports
<br>第十八週 Literature reports
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<br>六、成績考核(Evaluation)
<br>Midterm exam : 30%
<br>Final exam: 40%
<br>論文研讀報告: 30%
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<br>七、可連結之網頁位址
<br>NTHU iLMS