一、課程說明(Course Desc<x>ription) 
<br>Semiconductor memory devices are a crucial component of current Information 
<br>and Communication Technologies (ICT). As we are embarking on the next era of 
<br>AI, more advanced memory technology with the capability of in-memory and 
<br>neuromorphic computing becomes indispensable. The primary emphasis of the 
<br>course will be to cultivate an in-depth understanding of memory status and 
<br>perspectives. This course introduces various charge-ba<x>sed memory devices 
<br>including Static RAM (SRAM), Dynamic RAM (DRAM), and Flash Memory and emerging 
<br>non-charge ba<x>sed new types of memory including magnetic RAM (MRAM), phase 
<br>change memory (PCRAM), resistive RAM (ReRAM) and Ferroelectric RAM (FeRAM). 
<br>This course will cover various aspects of semiconductor memories, including 
<br>basic operation principles, device design considerations, device scaling, and 
<br>device technology. Furthermore, the course also extends to the AI applications 
<br>of new types of memory including in-memory and neuromorphic computing. 
<br>
<br>二、指定用書(Text Books)
<br>1. Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive 
<br>Guide to Understanding and Using Flash Memory Devices, Joe Brewer and Manzur 
<br>Gill, 2008 Wiley-IEEE Press.
<br>2. Emerging Nanoelectronic Devices, An Chen, James Hutchby, Victor Zhirnov, 
<br>and George Bourianoff, 2015 John Wiley and Sons Ltd.
<br>3. Emerging Memory Technologies: Design, Architecture, and Applications, Yuan 
<br>Xie, 2014 Springer.
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<br>三、參考書籍(References) 
<br>1.Technical reports from IEDM and Symp. VLSI
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<br>四、教學方式(Teaching Method) 
<br>課堂授課，每周上課 150 分鐘
<br>
<br>五、教學進度 (Syllabus)
<br>1. Introduction to Semiconductor Memory  
<br>2. Cell Structure and Operation Principle of DRAM 
<br>3. Process Technology and Development Trend for DRAM
<br>4. Cell Structure and Operation Principle of SRAM  
<br>5. Evolution of Nonvolatile Memory (PROM, EPROM, EEPROM)   
<br>6. Flash Memory Array Structure and Operation Principle 
<br>7. Scaling Limits and Development Trend for Flash Memory
<br>8. New Type of Memory Devices (MRAM, PCRAM, ReREM and FeRAM)
<br>9. Applications for In-Memory and Neuromorphic Computing 
<br>
<br>六、成績考核(Evaluation) 
<br>1. Midterm Exam: 30 %
<br>2. Final Exam: 30 %
<br>3. Final Report: 40 %