一、課程說明(Course Desc<x>ription) 
<br>The silicon integrated circuit is surely one of the wonders of our age. The 
<br>ability to fabricate tens of millions of individual components on a chip with an 
<br>area of a few centimeter square has enabled the information age. This course 
<br>attempts to describe not only the manufacturing practice associated with the 
<br>technologies used in silicon chip fabrication, but also the underlying scientific 
<br>basis for those technologies. This course will show the students how silicon 
<br>field-effect transistors are made using the knowledge learned in the ULSI technologies. 
<br>However, due to the limited implementation hours, students can only fabricate 
<br>p-type or n-type MOSFET with characteristics measured and simulated. 
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<br>二、參考書籍(References) 
<br>1. J. D. Plummer, M. M. Deal, and P. B. Griffin, Silicon VLSI Technology, Prentice 
<br>Hall, 2000. 
<br>2. Michael Quirk and Julian Serda, Semiconductor Manufacturing Technology, Prentice 
<br>Hall, 2001. 
<br>3. Robert Doering and Yoshio Nishi, Handbook of Semiconductor Manufacturing Technology, 
<br>CRC Press 2008. 
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<br>三、教學方式(Teaching Method) 
<br>1. In Chinese 
<br>2. The TA will give the students a mini instruction of the fabrication process and principles.
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<br>五、教學進度(Syllabus) 
<br>1. MOS structure and MOS process flow
<br>2. RCA clean and Wet oxidation for MOS
<br>3. Optical lithography-1 + Wet etching for MOS
<br>4. TCAD simulation Ⅰ (Process)
<br>5. TCAD simulation Ⅱ (Device)
<br>6. Exam of TCAD simulation
<br>7. RTA for MOS 
<br>8. Wet etching 
<br>9. Optical lithography-2 + Wet etching for MOS
<br>10. me<x>tallization for MOS via E-gun 
<br>11. Optical lithography-3 + Wet etching for MOS
<br>12. Backside me<x>tallization 
<br>13. Measurement of MOS 
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<br>六、成績考核(Evaluation) 
<br>1. Pre-assessment: those who cannot pass the assessment will fail in the final score. 
<br>2. Simulation test (40%) 
<br>3. Measurement report (60%) 
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