Overview of the Course:
This is more of a senior/graduate course on microfabrication and nanofabrication technology. The time
has gone from VLSI to ULSI (as many include this as nanotechnology), silicon substrate to glass
substrate, and even from glass substrate to plastic substrates. This course is designed to cover the
fundamental theory and state-of-the-art micro/nano technologies for the make of silicon based
integrated circuits, information display, and MEMS.

Main Course Materials:
Class Notes and textbook

Midterm and final:
One midterm and final exam will be given. They are closed book exams. Homework:
There will be problem sets in total. Homework solutions will be available after your homeworks are
graded. Late homeworks will have no credit. No collaboration on homeworks is allowed.

Reference Books
1. C.Y. Chang and S.M. Sze, “ULSI Technology,” 1996, McGraw-Hill Book Co.
2. S.M. Sze, "VLSI Technology," 1983, McGraw-Hill Book Co.
3. Hong Xiao, “Introduction to Semiconductor Manufacturing Technology,” 2001
ISBN: 0131911368, Prentice Hall

Syllabus (topics to be covered):
1. Introduction
2. Lithography
3. Oxidation, diffusion, and ion implementation
4. Etching
5. Chemical vapor deposition
6. metalization and physical vapor deposition
7. Process Integration

Detailed Syllabus:
1. Introduction
(1) Historical overview
(2) Device physics : MOSFET, BJT, a-Si TFT, MEMS example etc.
(3) VLSI and ULSI (silicon technology)
(4) TFT-LCD Display and solar (large area macroelectronics)
(5) MEMS
(6) Manufacturing platform and architechture: vacuum systems (vacuum pumps and plasma), wet
systems, inject, and roll to roll systems.
(7) Substrate materials: silicon ingot, fusion process for non-alkali glass, and other novel substrates
(8) Clean room fundamentals: Intel 45nm fab 10min video
(9) Comments on IP and patents
(10) Elements used in microfabrication overview
2. lithography
(1) General overview and comparision
(2) Photoresist
(2) Optical lithography
(3) Electron beam lithography
(4) X-ray lithography
(4) Nano imprint lithography
(5) Other novel lithography technique

3. Oxidation, diffusion, and ion implentation

4. Dry etching and wet etching
(1) Plasma fundamentals (CCP, ICP, microwave ECR, remote plasma, VHF), match, scaling effect
(2) General consideration: Etching rate, selectivity, anisotropic, loading
(3) XeF2 gas phase etching as an example
(4) RIE (reactive ion etching)
(5) ICP and microwave ECR etching
(6) DRIE for micromachining
(8) Remote (downstream) plasma etching
(7) Diagnostics (OES)
(8) Plasma induced damage
(9) Fluorocarbon chemistry
(10) Other etching chemistry
(11) Wet etching of oxide, nitride, and silicon


5. Chemical vapor deposition
(1) Chemical reaction W22;general consideration transportation limited and diffusion limited
(2) Process parameters
(3) AP CVD (atomosphere and low pressure chemical vapor deposition) and LPCVD (low pressure
chemical vapor deposition)
(4) PECVD (plasma enhanced chemical vapor deposition) CCP
(5) HDP (high density plasma) for ILD
(6) Oxide deposition (gate, ILD etc.) (SiH4 based oxide and TEOS based oxide)
(7) Nitride deposition
(8) Polysilicon and amorphous deposition (LTPS application)
(9) Catalytic CVD for nanotube
(10) Commonly used gas

6. metalization and physical vapor deposition
(1) Physical vapor W22;general consideration
(2) Thermal and e-beam evaporation
(3) Magnetron sputtering (PVD)
(4) atomic layer deposition (ALD)
(5) Chemical mechanical polishing for planarzation
(6) inter layer dielectric (ILD) deposition, HDP gap fill
(7) Electroplating
(8) MOCVD
(8) ITO sputtering as TCO (transparent conducting oxide)

7. Special topics : Polymer microfabrication, chemical mechanical polishing