一,課程說明(Course Description)
This course aims to provide students with a comprehensive view of modern
semiconductor devices for power electronic applications. After completing this
course, the students will be able to understand the operating physics and
electrical characteristics of power devices, as well as their design
considerations.

二,指定用書(Text Books)

1. Class notes

三,參考書籍(References)
1. B.J. Baliga, Power Semiconductor Devices, PWS Publishing Co., latest edition.

2. Josef Lutz et al., Semiconductor Power Devices, Springer-Verlag, 2011.

3. Mohan, Undeland, and Robbins, Power Electronics: Converters, Applications and
Design, John Wiley and Sons, latest edition.

四,教學方式(Teaching Method)
In Chinese.

五,教學進度(Syllabus)
1. Semiconductor fundamentals and transport physics (2 weeks)
2. Breakdown mechanisms and edge terminations (3 weeks)
3. Power rectifier (2 weeks)
4. Power BJT and thyristor (3 weeks)
5. Power MOSFET (3 weeks)
6. Insulated gate bipolar transistor (IGBT) (3 weeks)
7. Other high-power devices (2 week)


六,成績考核(Evaluation)
To be determined

七,講義位址(http://)
elearn.nthu.edu.tw