一、課程說明(Course Description)

The silicon integrated circuit is surely one of the wonders of our age. The

ability to fabricate tens of millions of individual components on a chip with an

area of a few centimeter square has enabled the information age. This course

attempts to describe not only the manufacturing practice associated with the

technologies used in silicon chip fabrication, but also the underlying scientific

basis for those technologies. This course will show the students how silicon

field-effect transistors are made using the knowledge learned in the ULSI

technologies.

However, due to the limited implementation hours, students can only fabricate

p-type or n-type MOSFET with characteristics measured and simulated.

二、參考書籍(References)

1. J. D. Plummer, M. M. Deal, and P. B. Griffin, Silicon VLSI Technology,

Prentice

Hall, 2000.

2. Michael Quirk and Julian Serda, Semiconductor Manufacturing Technology,

Prentice

Hall, 2001.

3. Robert Doering and Yoshio Nishi, Handbook of Semiconductor Manufacturing

Technology,

CRC Press 2008.

三、教學方式(Teaching Method)

1. In Chinese

2. The TA will give the students a mini instruction of the fabrication process

and principles.

五、教學進度(Syllabus)

1. MOS structure and MOS process flow

2. RCA clean and Wet oxidation for MOS

3. Optical lithography-1 + Wet etching for MOS

4. TCAD simulation Ⅰ (Process)

5. TCAD simulation Ⅱ (Device)

6. Exam of TCAD simulation

7. RTA for MOS

8. Wet etching

9. Optical lithography-2 + Wet etching for MOS

10. metallization for MOS via E-gun

11. Optical lithography-3 + Wet etching for MOS

12. Backside metallization

13. Measurement of MOS

六、成績考核(Evaluation)

1. Pre-assessment: those who cannot pass the assessment will fail in the final

score.

2. Simulation test (40%)

3. Measurement report (60%)