一、課程說明(Course Desc<x>ription)
<br>This course gives a general introduction to memory types, operation principles, 
<br>basic cell structure, process and fabrication issues, basic sense amplifiers, 
<br>array architecture, etc. The course is designed for beginning graduate students 
<br>who have basic understanding of semiconductor device physics and IC 
<br>technologies.
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<br> 二、指定用書(Text Books)
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<br>"Digital Integrated Ciruits, a design perspective" , Jan Rabaey, Prentice Hall
<br>"Nonvolatile Semiconductor Memories Technologies: A Complete to Understanding 
<br>and Using NVSM Devices", Brown & Brewer, IEEE Press 
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<br> 三、參考書籍(References)
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<br> 四、教學方式(Teaching Method)
<br>2 hours lecture +  1 hour Discussion each week. Simulation ba<x>sed assignments and 
<br>final project.
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<br> 五、教學進度(Syllabus)
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<br>Week 		Topic				
<br>1       Introduction			
<br>2       SRAM Cell Basics
<br>3 	SRAM Array / Advance Technologies		
<br>4	DRAM Cell Basics	
<br>5	Advance DRAM Technologies	
<br>6        Mask ROM	
<br>7	EPROM		
<br>8	EEPROM
<br>9       Midterm	
<br>10	Flash Cells				
<br>11	Flash Array Architecture
<br>12	Advance Flash Technologies		
<br>13	Periphery Circuit/Decoders
<br>14	Sensing and Control circuits 
<br>15      Failure Mechanisms/ Reliability   
<br>16	Charge Trapping Devices
<br>17      RRAM& MRAM
<br>18      Final Exam
<br>Project/Exam
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<br> 六、成績考核(Evaluation)
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<br>Discussion 30%
<br>Homework 20%
<br>Midterm 20%
<br>Final  30%
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<br> 七、可連結之網頁位址
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