一、課程說明(Course Description)



The silicon integrated circuit is surely one of the wonders of our age. The



ability to fabricate tens of millions of individual components on a chip with an



area of a few centimeter square has enabled the information age. This course



attempts to describe not only the manufacturing practice associated with the



technologies used in silicon chip fabrication, but also the underlying scientific



basis for those technologies. This course will show the students how silicon



field-effect transistors are made using the knowledge learned in the ULSI



technologies.



However, due to the limited implementation hours, students can only fabricate



p-type or n-type MOSFET with characteristics measured and simulated.











二、參考書籍(References)



1. J. D. Plummer, M. M. Deal, and P. B. Griffin, Silicon VLSI Technology,



Prentice



Hall, 2000.



2. Michael Quirk and Julian Serda, Semiconductor Manufacturing Technology,



Prentice



Hall, 2001.



3. Robert Doering and Yoshio Nishi, Handbook of Semiconductor Manufacturing



Technology,



CRC Press 2008.











三、教學方式(Teaching Method)



1. In Chinese



2. The TA will give the students a mini instruction of the fabrication process



and principles.











五、教學進度(Syllabus)



1. MOS structure and MOS process flow



2. RCA clean and Wet oxidation for MOS



3. Optical lithography-1 + Wet etching for MOS



4. TCAD simulation Ⅰ (Process)



5. TCAD simulation Ⅱ (Device)



6. Exam of TCAD simulation



7. RTA for MOS



8. Wet etching



9. Optical lithography-2 + Wet etching for MOS



10. metallization for MOS via E-gun



11. Optical lithography-3 + Wet etching for MOS



12. Backside metallization



13. Measurement of MOS











六、成績考核(Evaluation)



1. Pre-assessment: those who cannot pass the assessment will fail in the final



score.



2. Simulation test (40%)



3. Measurement report (60%)