一、課程說明(Course Description)

The silicon integrated circuit is surely one of the wonders of our age. The ability to fabricate tens of millions
of individual components on a chip with an area of a few centimeter square has enabled the information age.
This course attempts to describe not only the manufacturing practice associated with the technologies used
in silicon chip fabrication, but also the underlying scientific basis for those technologies. This course will
show the students how silicon field-effect transistors are made using the knowledge learned in the ULSI
technologies. However, due to the limited implementation hours, students can only fabricate p-type or n-type
MOSFET with characteristics measured and simulated.

二、參考書籍(References)

1. J. D. Plummer, M. M. Deal, and P. B. Griffin, Silicon VLSI Technology, Prentice Hall, 2000.

2. Michael Quirk and Julian Serda, Semiconductor Manufacturing Technology, Prentice Hall, 2001.

3. Robert Doering and Yoshio Nishi, Handbook of Semiconductor Manufacturing Technology, CRC Press
2008.

三、教學方式(Teaching Method)

1. In Chinese

2. The TA will give the students a mini instruction of the fabrication process and principles.

五、教學進度(Syllabus)

1. MOS structure and MOS process flow

2. RCA clean and Wet oxidation for MOS

3. Optical lithography-1 + Wet etching for MOS

4. TCAD simulation Ⅰ (Process)

5. TCAD simulation Ⅱ (Device)

6. Exam of TCAD simulation

7. RTA for MOS

8. Wet etching

9. Optical lithography-2 + Wet etching for MOS

10. metallization for MOS via E-gun

11. Optical lithography-3 + Wet etching for MOS

12. Backside metallization

13. Measurement of MOS

六、成績考核(Evaluation)

1. Pre-assessment: those who cannot pass the assessment will fail in the final score.

2. Simulation test (40%)

3. Measurement report (60%)

七、AI 使用規則

(2)有條件開放，請註明如何使用生成式AI於課程產出