Instructor: Dr. Chao-Hui Yeh
- Office: Delta R825
- Tel.: 03-5162173
- Email: chyeh@ee.nthu.edu.tw
- Office hour: by appointment


A. Course Description: Introduction of Detailed investigation of
the basic principles of 'unit' processes used in the fabrication of solid-state
devices and integrated circuits for silicon based electronics and beyond.
Emphasis is placed on the fundamental aspects of lithography, film deposition,
wet
etching, anisotropic dry etching, crystal growth, ion implantation, and chemical
vapor deposition of metals and insulators.

B. Text Books:
1. Silicon VLSI Technology, Fundamentals, Practice and Modeling, J. D. Plummer,
M.D. Deal, and P.B. Griffin, Prentice-Hall, 2000, ISBN: 0-13-085037-3.


C. Reference book:
1. Fundamentals of Semiconductor Fabrication, G. S. May, S. M. Sze, Wiley, 2003
ISBN: 978-0-471-23279-7
2. Semiconductor Devices: Physics and Technology 3/E, S. M. Sze, M.-K. Lee,
Wiley, 2012
3. Semiconductor Manufacturing Technology, M. Quirk and J. Serda, Prentice Hall,
2001.
4. Semiconductor Physics & Devices Basic Principles 4/E(IE), D. A. Neamen,
McGrawHill
2012, ISBN：978-0-071-08902-9


D. Teaching Method
1. In English (>85%)/Chinese (<15%)
2. Power point slides will be uploaded in the e-learning system before
we start the chapter.

E. Syllabus
Chapter 1 Introduction and Historical Perspective
Chapter 2 Modern CMOS/Device Technology
Chapter 3 Crystal Growth, Wafer Fabrication and Basic Properties of Silicon
Wafers
Chapter 4 Semiconductor Manufacturing
Chapter 5 Lithography
Chapter 6 Thermal Oxidation
Chapter 7 Diffusion
Chapter 8 Ion Implantation
Chapter 9 Thin Film Deposition
Chapter 10 Etching
Chapter 11 Back-End Technology


F. Evaluation
Midterm-I 20%
Midterm-II 20%
Final 20%
Homework 20%
Simulation Project 20%

G. Use of AI in the course
* Not applicable