● 課程說明(Course Desc<x>ription)
<br>An introduction of the compound semiconductor power and RF device technology 
<br>includes device, epitaxy, process, package, circuit topology, stability & 
<br>reliability, modeling and integration circuits.
<br>
<br>Course ob<x>jective:
<br>To enable students to establish an overview understanding on various technical 
<br>aspects of compound semiconductor power and RF device technology.
<br>
<br>Course Outcomes:
<br>1. Upon of completion of this course, the participants should be able to:
<br>2. Understanding the evolution of compound semiconductor power and RF device 
<br>technology development.
<br>3. Understanding the advantages and challenges of compound semiconductor power 
<br>and RF device technology.
<br>4. Understanding the technical breakthroughs and future directions of device, 
<br>epitaxial, process
<br>and packaging design.
<br>5. Understanding the basic stability and reliability of compound semiconductor 
<br>power and RF device technology.
<br>6. Understanding future development directions in ICs and applications.
<br>
<br>● 指定用書(Text Books)
<br>Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, “Gallium Nitride-enabled 
<br>High Frequency and High Efficiency Power Conversion”, 2018, Springer.
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<br>● 參考書籍(References)
<br>B. Baliga, “Fundamentals of Power Semiconductor Devices”, 2008, Springer.
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<br>教學方式(Teaching Method)
<br>Lectures offered in English
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<br>教學進度(Syllabus)
<br>1. Introduction to Wide bandgap Semiconductor Power Devices
<br>2. Introduction to GaN-on-Si Power HEMTs (Device Physics)
<br>3. GaN-on-Si Epitaxy Technology for GaN Power HEMTs
<br>4. CMOS-compatible Process for GaN Power HEMT Fabrication
<br>5. GaN Power Device Stability and Reliability
<br>6. Circuit Topologies for GaN Power HEMT Applications
<br>7. Packaging of GaN Power HEMTs
<br>8. Modeling of GaN power HEMTs
<br>9. Monolithic Integration and Co-package Solutions
<br>10. Introduction of Compound semiconductor RF Devices
<br>
<br>Final Project
<br>-GaN HEMT Device Fabrication
<br>-GaN HEMT Characterization
<br>-Board-level Characterization
<br>-Presentation
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<br>● 成績考核(Evaluation)
<br>  Course Quiz: 70%
<br>  Final project: 30%
<br>
<br>● 採用下列何項 AI 使用規則 (Indicate which of the following options you use to 
<br>manage student use of the AI)
<br>禁止使用，請註明相關的監管機制 Prohibited use; please specify relevant oversight
<br>
<br># 備註：選課學生需具有修畢元件物理或等同課程相關背景，而因為要去TSRI做實驗，亦需要有
<br>TSRI門禁權限。
<br>
<br>Note: Students who choose the course must have a background in component physics 
<br>or equivalent courses, and because they want to do experiments at TSRI, they 
<br>also need to have TSRI access rights.
<br>
<br>